IRFL024NTRPBF
MOSFET N-CH 55V 2.8A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFL024NTRPBF, offers a 55V drain-source voltage with a continuous drain current of 2.8A at 25°C (Ta). This device features a maximum on-resistance of 75mOhm at 2.8A and 10V gate-source voltage. With a gate charge of 18.3nC (max) at 10V and input capacitance of 400pF (max) at 25V, it is designed for efficient switching applications. The MOSFET can dissipate up to 1W (Ta) and operates across a temperature range of -55°C to 150°C (TJ). Packaged in a SOT-223 (TO-261-4, TO-261AA) surface mount configuration and supplied on tape and reel, this component is suitable for use in industrial and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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