IRFIZ48VPBF
MOSFET N-CH 60V 39A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFIZ48VPBF is an N-channel power MOSFET designed for high-efficiency switching applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 39A at 25°C (Tc). With a low on-resistance of 12mOhm at 43A and 10V Vgs, it minimizes conduction losses. The IRFIZ48VPBF offers a gate charge of 110 nC at 10V and an input capacitance of 1985 pF at 25V, enabling fast switching performance. It is packaged in a TO-220AB Full-Pak with a through-hole mounting type, and supports a maximum power dissipation of 43W (Tc). Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in automotive, industrial power control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1985 pF @ 25 V |
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