IRFIZ48N
MOSFET N-CH 55V 36A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRFIZ48N is an N-Channel Power MOSFET designed for demanding applications. Featuring a 55V drain-to-source voltage (Vdss) and a continuous drain current of 36A at 25°C (Tc), this component offers robust performance. The low on-resistance (Rds On) of 16mOhm at 22A and 10V gate-source voltage (Vgs) ensures efficient power handling, with a maximum power dissipation of 42W (Tc).
This through-hole device, packaged in a PG-TO220-FP configuration, utilizes advanced MOSFET technology. Key parameters include a gate charge of 89 nC at 10V and input capacitance (Ciss) of 1900 pF at 25V. The operating temperature range is -55°C to 175°C (TJ), with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. This component is commonly found in industrial power supplies, automotive systems, and high-power switching applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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