IRFIZ46N
MOSFET N-CH 55V 33A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFIZ46N is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 33A at 25°C (Tc). The low on-resistance (Rds On) of 20mOhm at 19A and 10V gate drive facilitates efficient power transfer. With a maximum power dissipation of 45W (Tc), it is suitable for power management in industrial and automotive sectors. The device utilizes advanced HEXFET® technology for optimized performance. It is supplied in a PG-TO220-FP package for through-hole mounting. Key parameters include a gate charge (Qg) of 61 nC at 10V and an input capacitance (Ciss) of 1500 pF at 25V. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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