IRFIZ34NPBF
MOSFET N-CH 55V 21A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFIZ34NPBF is an N-channel power MOSFET designed for efficient power switching applications. This component features a 55V drain-source breakdown voltage and a continuous drain current capability of 21A at 25°C case temperature, with a maximum power dissipation of 37W (Tc). The Rds(on) is specified at a low 40mOhm maximum when driven at 11A and 10V Vgs. With a gate charge of 34nC and input capacitance of 700pF, it offers good switching characteristics. The TO-220AB Full-Pak package facilitates through-hole mounting. This MOSFET is suitable for use in automotive, industrial, and power supply applications demanding robust performance. The operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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