IRFIZ34E
MOSFET N-CH 60V 21A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFIZ34E is a 60V N-Channel Power MOSFET designed for high-efficiency power conversion. This through-hole component, packaged in a PG-TO220-FP, offers a continuous drain current of 21A (Tc) and a maximum power dissipation of 37W (Tc). Key electrical characteristics include a low on-resistance of 42mOhm at 11A and 10V, and a gate charge (Qg) of 34 nC at 10V, facilitating fast switching performance. The device features an input capacitance (Ciss) of 700 pF at 25V and a threshold voltage (Vgs(th)) of 4V at 250µA. With an operating temperature range of -55°C to 175°C (TJ) and a maximum gate-source voltage of ±20V, the IRFIZ34E is suitable for applications in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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