IRFIZ24NPBF
MOSFET N-CH 55V 14A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFIZ24NPBF. This TO-220AB Full-Pak device offers a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 14 A at 25°C. The Rds(on) is specified at a maximum of 70 mOhm at 7.8 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 20 nC at 10 V and input capacitance (Ciss) of 370 pF at 25 V. With a maximum power dissipation of 29 W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
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