IRFIZ24EPBF
MOSFET N-CH 60V 14A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFIZ24EPBF, offers a 60V drain-source voltage and 14A continuous drain current at 25°C. This device features a low on-resistance of 71mOhm maximum at 7.8A and 10V Vgs, with a gate charge of 20 nC maximum at 10V. The input capacitance (Ciss) is rated at 370 pF maximum at 25V. Designed for through-hole mounting in a TO-220AB Full-Pak package, it supports a maximum power dissipation of 29W at 25°C (Tc). The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in industrial automation, power supply design, and motor control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 71mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
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