IRFIZ24E
MOSFET N-CH 60V 14A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFIZ24E is a 60V N-Channel Power MOSFET designed for efficient power switching applications. This component features a continuous drain current capability of 14A at 25°C (Tc) and a maximum power dissipation of 29W (Tc). The low on-resistance, specified at 71mOhm maximum at 7.8A and 10V Vgs, ensures minimal conduction losses. With a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 370 pF at 25V, it offers robust switching performance. The device operates with a gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 4V at 250µA. Packaged in a PG-TO220-FP through-hole configuration, the IRFIZ24E is suitable for industrial, automotive, and power supply applications. It maintains operation across a wide temperature range from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 71mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
