IRFI9Z34N
MOSFET P-CH 55V 14A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFI9Z34N is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 14A at 25°C (Tc). With a maximum power dissipation of 37W (Tc) and a low on-resistance (Rds On) of 100mOhm at 7.8A and 10V gate drive, it is suitable for power management and control circuits. The IRFI9Z34N utilizes MOSFET technology and is packaged in a TO-220AB Full-Pak for through-hole mounting. Key parameters include a gate charge (Qg) of 35 nC at 10V and input capacitance (Ciss) of 620 pF at 25V. This component finds application in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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