IRFI9530N
MOSFET P-CH 100V 7.7A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFI9530N is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 7.7 A at 25°C (Ta). The Rds(On) is specified at a maximum of 300 mOhm at 4.6 A and 10 V gate-source voltage. Key parameters include a Gate Charge (Qg) of 38 nC (max) at 10 V and an Input Capacitance (Ciss) of 860 pF (max) at 25 V. The device utilizes MOSFET technology and is housed in a TO-220AB Full-Pak package for through-hole mounting. Applications for this component can be found in industrial automation and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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