IRFI7536GPBF
MOSFET N-CH 60V 86A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFI7536GPBF is an N-Channel Power MOSFET designed for high-current applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 86A at 25°C (Tc). The low on-resistance of 3.4mOhm at 75A and 10V gate drive makes it suitable for efficient power switching. With a maximum power dissipation of 75W (Tc), this TO-220 Full Pack through-hole device offers robust thermal performance. Key parameters include a gate charge of 195 nC at 10V and input capacitance of 6600 pF at 48V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in industries such as industrial power supplies, motor control, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 48 V |
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