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IRFI7446GPBF

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IRFI7446GPBF

MOSFET N-CH 40V 80A TO220AB FP

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies presents the IRFI7446GPBF, a robust N-Channel MOSFET from the StrongIRFET™ series. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at 25°C, with a maximum Power Dissipation (Pd) of 40.5W (Tc). The low on-resistance of 3.3mOhm @ 48A, 10V is achieved with a gate drive voltage of 10V. Key parameters include a Gate Charge (Qg) of 90 nC @ 10V and an Input Capacitance (Ciss) of 3199 pF @ 25V. The IRFI7446GPBF is housed in a TO-220-3 Full Pack package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 175°C. This device is commonly utilized in industrial automation, electric vehicle powertrains, and power supply applications.

Additional Information

Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs3.3mOhm @ 48A, 10V
FET Feature-
Power Dissipation (Max)40.5W (Tc)
Vgs(th) (Max) @ Id3.9V @ 100µA
Supplier Device PackageTO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3199 pF @ 25 V

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