IRFI530N
MOSFET N-CH 100V 12A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFI530N is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 12A at 25°C. The Rds(on) is specified at a maximum of 110mOhm at 6.6A and 10V gate drive. With a typical input capacitance (Ciss) of 640pF and gate charge (Qg) of 44nC, it offers efficient switching characteristics. The device is housed in a PG-TO220-FP package for through-hole mounting, supporting a maximum power dissipation of 41W at 25°C. Operating temperature ranges from -55°C to 175°C. This MOSFET is suitable for use in industrial and automotive power control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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