IRFI4905
MOSFET P-CH 55V 41A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRFI4905, offers a robust solution for power management applications. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 41A at 25°C (Tc), with a maximum power dissipation of 63W (Tc). The IRFI4905 exhibits a low on-resistance (Rds On) of 20mOhm at 22A and 10V gate-source voltage, facilitating efficient power transfer. Its P-channel Metal Oxide technology and a gate charge (Qg) of 180 nC at 10V ensure reliable switching characteristics. The component is housed in a TO-220AB Full-Pak package, designed for through-hole mounting. Typical applications include power supplies, motor control, and battery management systems across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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