IRFI4510GPBF
MOSFET N CH 100V 35A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET N-Channel IRFI4510GPBF is designed for high-performance power switching applications. This through-hole component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 35 A at 25°C (Tc). With a low on-resistance (Rds On) of 13.5 mOhm at 21 A and 10 V, it minimizes conduction losses. The device boasts a gate charge (Qg) of 81 nC at 10 V and input capacitance (Ciss) of 2998 pF at 50 V, critical parameters for efficient switching. This MOSFET is housed in a TO-220AB Full-Pak package, offering a maximum power dissipation of 42 W (Tc) and operating temperature range of -55°C to 175°C (TJ). Its robust design makes it suitable for use in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2998 pF @ 50 V |
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