IRFI4410ZPBF
MOSFET N-CH 100V 43A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFI4410ZPBF. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 43A at 25°C (Tc). The IRFI4410ZPBF offers a low on-resistance of 9.3mOhm at 26A and 10V Vgs. With a maximum power dissipation of 47W (Tc), it is suitable for applications requiring efficient power switching. Key parameters include a gate charge of 110 nC at 10V and an input capacitance (Ciss) of 4910 pF at 50V. The component is housed in a TO-220AB Full-Pak package for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly employed in industrial power supplies, automotive electronics, and motor drive applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4910 pF @ 50 V |
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