IRFI4410ZGPBF
MOSFET N-CH 100V 43A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFI4410ZGPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 43A at 25°C. The low on-resistance (Rds On) of 9.3mOhm at 26A and 10V gate drive ensures minimal conduction losses. With a maximum power dissipation of 47W (Tc) and a low threshold voltage (Vgs(th)) of 4V, it is suitable for demanding applications. The MOSFET utilizes the TO-220AB Full-Pak package for through-hole mounting, facilitating robust thermal management. Key parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 4910 pF at 50V. This component finds utility in power supply designs, motor control, and industrial automation. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4910 pF @ 50 V |