IRFI4229PBF
MOSFET N-CH 250V 19A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFI4229PBF, features a 250V drain-source breakdown voltage and a continuous drain current of 19A at 25°C (Tc). This device offers a low on-resistance of 46mOhm maximum at 11A, 10V gate-source voltage, and a gate charge of 110 nC maximum at 10V. The input capacitance (Ciss) is specified at 4480 pF maximum at 25V. Designed for through-hole mounting, it comes in a standard TO-220AB package. With a maximum power dissipation of 46W at 25°C (Tc) and an operating temperature range of -40°C to 150°C (TJ), the IRFI4229PBF is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4480 pF @ 25 V |
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