IRFI4228PBF
MOSFET N-CH 150V 34A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFI4228PBF is an N-channel power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 34A at 25°C (Tc). The On-Resistance (Rds On) is specified at a maximum of 16mOhm at 20A and 10V. Key parameters include a Gate Charge (Qg) of 110 nC at 10V and an Input Capacitance (Ciss) of 4560 pF at 25V. The MOSFET operates with a gate drive voltage of 10V and has a maximum gate-source voltage (Vgs) of ±30V. Maximum power dissipation is 46W (Tc). The device is housed in a TO-220AB Full-Pak package, suitable for through-hole mounting. Operating temperature range is -40°C to 150°C (TJ). This component is commonly found in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4560 pF @ 25 V |
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