IRFI4227PBF
MOSFET N-CH 200V 26A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFI4227PBF is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This through-hole component features a drain-source breakdown voltage of 200V and a continuous drain current capability of 26A at 25°C (Tc). The device exhibits a low on-resistance of 25mOhm maximum at 17A and 10V Vgs. With a gate charge of 110 nC (max) at 10V and input capacitance of 4600 pF (max) at 25V, it is optimized for fast switching. The IRFI4227PBF is rated for 46W maximum power dissipation (Tc) and operates across a junction temperature range of -40°C to 150°C. Its TO-220AB Full-Pak package is suitable for various industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
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