IRFI4110GPBF
MOSFET N-CH 100V 72A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
This Infineon Technologies HEXFET® N-channel power MOSFET, part number IRFI4110GPBF, offers robust performance with a 100V drain-source voltage. It features a low on-resistance of 4.5mOhm at 43A and 10V gate drive, optimized for efficient power handling. The continuous drain current capability is 72A at 25°C, with a maximum power dissipation of 61W. Key parameters include a gate charge of 290 nC at 10V and input capacitance of 9540 pF at 50V. This device is housed in a TO-220AB Full-Pak package, suitable for through-hole mounting. Its operating temperature range is -55°C to 175°C. Applications include power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 61W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9540 pF @ 50 V |
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