IRFI3306GPBF
MOSFET N-CH 60V 71A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFI3306GPBF is a high-performance N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 60V drain-source breakdown voltage and a continuous drain current capability of 71A at 25°C (Tc). The IRFI3306GPBF offers a low on-resistance of 4.2mOhm maximum at 43A and 10V gate drive. Key electrical parameters include a gate charge (Qg) of 135 nC maximum at 10V and input capacitance (Ciss) of 4685 pF maximum at 50V. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is housed in a standard TO-220-3 Full Pack package, suitable for power management and switching applications in industries such as industrial automation, automotive, and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4685 pF @ 50 V |
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