IRFI1010NPBF
MOSFET N-CH 55V 49A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFI1010NPBF is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a 55 V drain-source voltage (Vdss) and a continuous drain current (Id) of 49 A at 25°C. The IRFI1010NPBF offers a low on-resistance (Rds On) of 12 mOhm at 26 A and 10 V gate-source voltage, minimizing conduction losses. With a gate charge (Qg) of 130 nC at 10 V and an input capacitance (Ciss) of 2900 pF at 25 V, it facilitates efficient switching. The device is rated for 58 W of power dissipation and operates across a temperature range of -55°C to 150°C. Packaged in a TO-220AB Full-Pak for through-hole mounting, this MOSFET is suitable for use in power supplies, motor control, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
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