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IRFHS9301TR2PBF

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IRFHS9301TR2PBF

MOSFET P-CH 30V 6A PQFN

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies P-Channel Power MOSFET, part number IRFHS9301TR2PBF, is a 30V device with a continuous drain current of 6A at 25°C ambient and 13A at 25°C case temperature. This MOSFET features a low Rds(on) of 37mOhm at 7.8A and 10V Vgs. The gate charge is specified at a maximum of 13 nC at 10V, with input capacitance (Ciss) at 580 pF maximum at 25V. Packaged in a 6-PQFN (2x2) surface mount configuration, it is supplied on cut tape. Applications for this technology are found in automotive and industrial power switching systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / Case6-PowerVDFN
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs37mOhm @ 7.8A, 10V
FET Feature-
Vgs(th) (Max) @ Id2.4V @ 25µA
Supplier Device Package6-PQFN (2x2)
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 25 V

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