IRFHS8342TRPBF
MOSFET N-CH 30V 8.8A/19A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFHS8342TRPBF, features a 30V drain-source voltage and a continuous drain current of 8.8A at ambient temperature and 19A at case temperature. This device offers a low on-resistance of 16 mOhm at 8.5A and 10V Vgs, with a maximum gate charge of 8.7 nC at 10V. The MOSFET is housed in a compact 6-PQFN (2x2) package, suitable for surface mounting. Key electrical parameters include input capacitance (Ciss) of 600 pF at 25V and a threshold voltage (Vgs(th)) of 2.35V at 25µA. Designed for demanding applications, the IRFHS8342TRPBF operates within a temperature range of -55°C to 150°C. This component is widely utilized in automotive and industrial power management solutions. The Digi-Reel® packaging facilitates high-volume automated assembly.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 6-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 6-PQFN (2x2) (DFN2020) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
