IRFHS8242TRPBF
MOSFET N-CH 25V 9.9A/21A 6PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFHS8242TRPBF, offers a 25V drain-source voltage and a continuous drain current of 9.9A at 25°C ambient and 21A at 25°C case temperature. This device features a low Rds(on) of 13mOhm at 8.5A and 10V, with a gate charge of 10.4 nC maximum at 10V. The MOSFET operates with a gate-source voltage range of ±20V and a threshold voltage of 2.35V at 25µA. Packaged in a compact 6-PQFN (2x2) (DFN2020) format suitable for surface mounting, it utilizes advanced MOSFET technology for efficient power handling with a maximum power dissipation of 2.1W (Ta). The operating temperature range is -55°C to 150°C. This component is well-suited for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta), 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 6-PQFN (2x2) (DFN2020) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 653 pF @ 10 V |
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