IRFHS8242TR2PBF
MOSFET N-CH 25V 9.9A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IRFHS8242TR2PBF is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 25V Drain-to-Source voltage rating and offers a continuous drain current capacity of 9.9A at ambient temperature (Ta) and 21A at case temperature (Tc). The device is housed in a compact 6-PQFN (2x2) surface-mount package, ideal for space-constrained designs. Key electrical characteristics include a maximum on-resistance (Rds On) of 13mOhm at 8.5A and 10V, and a gate charge (Qg) of 10.4 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 653pF at 10V. This MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors requiring robust power switching. The part is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta), 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 8.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 6-PQFN (2x2) |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 653 pF @ 10 V |
Request a Quote
Clients Also Buy
IRL3705ZLPBF
MOSFET N-CH 55V 75A TO262
IRF3805STRLPBF
MOSFET N-CH 55V 75A D2PAK
IPB073N15N5ATMA1
MOSFET N-CH 150V 114A TO263-3
