IRFHM9391TRPBF
MOSFET P-CH 30V 11A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRFHM9391TRPBF, offers a 30V drain-source voltage and a continuous drain current of 11A at 25°C. This device features a low 14.6mOhm maximum Rds(on) at 11A and 10V Vgs, crucial for efficient power switching applications. The P-channel MOSFET is housed in an 8-PQFN (3.3x3.3) package, also known as Power33, for surface mounting. Key parameters include a gate charge (Qg) of 16 nC maximum at 10V Vgs and an input capacitance (Ciss) of 1543 pF maximum at 25V Vds. With a maximum power dissipation of 2.6W, it is suitable for operation across a wide temperature range from -55°C to 150°C. This component finds application in various industrial and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 14.6mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.6W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1543 pF @ 25 V |
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