IRFHM9331TR2PBF
MOSFET P-CH 30V 11A 3X3 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies P-Channel MOSFET, part number IRFHM9331TR2PBF, offers robust performance in a compact 3x3 PQFN package. This surface-mount device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current capability of 11A at 25°C ambient, scaling to 24A under thermal control. The low on-resistance of 10mOhm at 11A and 20V Vgs ensures minimal power dissipation, crucial for efficiency. Key electrical parameters include a gate charge (Qg) of 48 nC at 10V and input capacitance (Ciss) of 1543 pF at 25V. This component is well-suited for applications in power management, automotive electronics, and industrial automation where efficient switching and compact form factors are paramount. The device is supplied in cut tape packaging for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11A, 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | PQFN (3x3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1543 pF @ 25 V |
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