IRFHM8342TRPBF
MOSFET N-CH 30V 10A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRFHM8342TRPBF is an N-Channel Power MOSFET designed for efficient power management applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 10A at 25°C ambient temperature. The device offers a low on-resistance of 16mOhm maximum at 17A and 10V gate-source voltage, contributing to reduced conduction losses. With a gate charge (Qg) of 7.5 nC maximum at 4.5V, it ensures fast switching performance. The MOSFET is housed in an 8-PQFN (3.3x3.3) package, identified as Power33, suitable for surface mounting. It is supplied in tape and reel packaging for automated assembly. The IRFHM8342TRPBF is rated for an operating temperature range of -55°C to 150°C. Its specifications make it suitable for use in power supplies, battery management, and other demanding electronic systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.6W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 25 V |
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