IRFHM8337TRPBF
MOSFET N-CH 30V 12A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFHM8337TRPBF is an N-channel power MOSFET designed for efficient switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Ta). With a low on-resistance (Rds On) of 12.4mOhm at 12A and 10V, it minimizes conduction losses. The device is housed in an 8-PQFN (3.3x3.3) package, also known as Power33, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 8.1 nC at 4.5V and input capacitance (Ciss) of 755 pF at 15V. Maximum power dissipation is rated at 2.8W (Ta) and 25W (Tc). This MOSFET operates across a wide temperature range of -55°C to 150°C. It finds application in various industries including automotive, industrial power, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 755 pF @ 15 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
