IRFHM8330TRPBF
MOSFET N-CH 30V 16A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFHM8330TRPBF is an N-Channel MOSFET with a 30V drain-source voltage. This component features a low on-resistance of 6.6mOhm at 20A and 10V gate-source voltage, with continuous drain current capability of 16A at 25°C ambient. The device utilizes a 3.3x3.3mm 8-PQFN (Power33) package for surface mount applications, offering efficient thermal management with a power dissipation of 33W at 25°C case temperature. Key electrical parameters include a gate charge of 20 nC at 10V and input capacitance of 1450 pF at 25V. This MOSFET is suitable for high-density power applications across various industries, including automotive and industrial automation. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |
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