IRFHM8329TRPBF
MOSFET N-CH 30V 16A/57A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFHM8329TRPBF, is a 30V device available in a 3x3 PQFN package. This surface mount component offers a continuous drain current of 16A at ambient temperature and 57A at case temperature, with a maximum power dissipation of 2.6W (Ta) and 33W (Tc). The Rds On is specified at 6.1mOhm maximum at 20A and 10V Vgs. Key parameters include a Vgs(th) of 2.2V, a gate charge of 26 nC, and an input capacitance of 1710 pF. This MOSFET is suitable for applications requiring high current density and efficient switching, commonly found in power management, automotive electronics, and industrial control systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.6W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 25µA |
| Supplier Device Package | PQFN (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 10 V |
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