IRFHM8326TRPBFXTMA1
TRENCH <= 40VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRFHM8326TRPBFXTMA1, offers a 30V drain-source voltage and continuous drain current of 19A at 25°C ambient, or 25A at 25°C case temperature. This surface-mount device features a low Rds(on) of 4.7mOhm at 20A and 10Vgs, with a gate voltage range up to ±20V. The device boasts a maximum gate charge of 39nC at 10Vgs and input capacitance of 2496pF at 10Vds. Designed for efficient power management, it dissipates 2.8W ambient or 37W case temperature. The 8-PQFN (3.1x3.1) package is supplied on a Digi-Reel®. This TRENCH MOSFET technology is suitable for applications in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 37W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 50µA |
| Supplier Device Package | 8-PQFN (3.1x3.1) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2496 pF @ 10 V |