IRFHM8326TRPBF
MOSFET N-CH 30V 25A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFHM8326TRPBF is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a 30V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 19A at 25°C ambient, with a higher 37W power dissipation capability under continuous drain at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 4.7mOhm maximum at 20A and 10V Vgs. Optimized for switching applications with a gate charge (Qg) of 39 nC at 10V Vgs and an input capacitance (Ciss) of 2496 pF at 10V Vds, it achieves efficient operation across drive voltages from 4.5V to 10V. Packaged in an 8-PowerTDFN for surface mounting, the IRFHM8326TRPBF is suitable for demanding applications in automotive and industrial power management systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 37W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 50µA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2496 pF @ 10 V |
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