IRFHM831TRPBF
MOSFET N-CH 30V 14A/40A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFHM831TRPBF. This 30V device features a low Rds(on) of 7.8mOhm at 12A, 10V, enabling efficient current handling up to 40A (Tc). Designed for surface mounting in a compact 3x3 PQFN package, it offers a maximum power dissipation of 27W (Tc). Key electrical parameters include Vgs(th) of 2.35V, Qg of 16 nC, and Ciss of 1050 pF. Operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive, industrial, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 27W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | PQFN (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
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