IRFHM831TR2PBF
MOSFET N-CH 30V 14A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel Power MOSFET, part number IRFHM831TR2PBF, offers a 30V Drain-to-Source voltage (Vdss). This component features a low on-resistance (Rds On) of 7.8mOhm at 12A and 10V Vgs, with a continuous drain current capability of 14A at 25°C ambient (40A at 25°C case). The gate charge (Qg) is a maximum of 16 nC at 10V Vgs, and input capacitance (Ciss) is 1050 pF maximum at 25V Vds. The device utilizes MOSFET technology and is supplied in an 8-PowerTDFN package, specifically a PQFN (3x3) footprint, for surface mounting. This component is suitable for applications in consumer electronics and industrial automation. The part is delivered in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 12A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | PQFN (3x3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
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