IRFHM830TRPBF
MOSFET N-CH 30V 21A/40A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFHM830TRPBF is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 30 V drain-source breakdown voltage (Vdss) and supports continuous drain currents of 21 A at ambient temperature (Ta) and 40 A at case temperature (Tc). The device exhibits a low on-resistance (Rds(on)) of 3.8 mOhm at 20 A and 10 V gate-source voltage (Vgs). It is available in a compact 8-PQFN-Dual (3.3x3.3) surface-mount package, suitable for demanding thermal performance with a maximum power dissipation of 2.7 W (Ta) and 37 W (Tc). Key electrical parameters include a gate charge (Qg) of 31 nC at 10 V and input capacitance (Ciss) of 2155 pF at 25 V. This MOSFET is engineered for reliable operation across a wide temperature range of -55°C to 150°C (TJ). Its characteristics make it suitable for use in automotive, industrial, and consumer electronics power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 37W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Supplier Device Package | 8-PQFN-Dual (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2155 pF @ 25 V |
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