IRFHM830TR2PBF
MOSFET N-CH 30V 21A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies MOSFET N-Channel, part number IRFHM830TR2PBF, offers 30V drain-source voltage and a continuous drain current of 21A (Ta) or 40A (Tc) at 25°C. This device features a low Rds(on) of 3.8mOhm at 20A, 10V, and a typical gate charge of 31 nC at 10V. The input capacitance (Ciss) is 2155 pF maximum at 25V. Encased in an 8-VQFN exposed pad package, specifically a 3x3 PQFN, this surface-mount component is supplied in cut tape packaging. It is utilized in applications such as power management and automotive systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Supplier Device Package | PQFN (3x3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2155 pF @ 25 V |
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