IRFHM830DTRPBF
MOSFET N-CH 30V 20A/40A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFHM830DTRPBF is an N-Channel Power MOSFET designed for efficient power management. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 20A at ambient temperature, increasing to 40A at case temperature. Its low on-resistance, 4.3mOhm maximum at 20A and 10V Vgs, is achieved with a 10V gate drive, with operation specified from 4.5V to 10V. The device offers a maximum power dissipation of 2.8W at ambient and 37W at case temperature. Key electrical parameters include a gate charge (Qg) of 27 nC maximum at 10V Vgs and input capacitance (Ciss) of 1797 pF maximum at 25V Vds. The IRFHM830DTRPBF is housed in an 8-VQFN exposed pad package (3x3mm) suitable for surface mounting and supplied on tape and reel. This MOSFET is utilized in applications across automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 37W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Supplier Device Package | PQFN (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1797 pF @ 25 V |
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