IRFHM830DTR2PBF
MOSFET N-CH 30V 20A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFHM830DTR2PBF, a N-Channel Power MOSFET, features a 30V drain-source breakdown voltage and a continuous drain current of 20A at 25°C ambient or 40A at 25°C case temperature. This component is supplied in a compact PQFN (3x3) 8-VQFN exposed pad package, suitable for surface mounting. Key electrical characteristics include a low on-resistance of 4.3mOhm at 20A and 10V Vgs, a gate charge of 27 nC maximum at 10V, and an input capacitance of 1797 pF maximum at 25V. The threshold voltage is specified at 2.35V maximum for 50µA gate current. This MOSFET is utilized in various industrial applications, including power management and switching circuits. It is provided in cut tape packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 20A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Supplier Device Package | PQFN (3x3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1797 pF @ 25 V |
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