IRFHM8235TRPBF
MOSFET N-CH 25V 16A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® IRFHM8235TRPBF is an N-Channel MOSFET designed for high-efficiency power management. This device features a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C. With a maximum Rds(on) of 7.7mOhm at 20A and 10V Vgs, it offers low conduction losses. The 8-PQFN (3.3x3.3) package, also known as Power33, facilitates efficient thermal management, providing 3W of power dissipation at ambient temperature (Ta) and 30W at case temperature (Tc). Key parameters include a gate charge (Qg) of 12 nC at 4.5V and input capacitance (Ciss) of 1040 pF at 10V Vds. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in automotive, industrial, and consumer electronics where robust power switching is critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 10 V |
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