IRFHM8228TRPBF
MOSFET N-CH 25V 19A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFHM8228TRPBF is a N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a 25V drain-source breakdown voltage and a continuous drain current rating of 19A at 25°C ambient. The low on-resistance of 5.2mOhm at 20A and 10V gate-source voltage contributes to minimal conduction losses. With a gate charge of 18 nC maximum at 10V, switching performance is optimized. The device offers a maximum power dissipation of 2.8W under ambient conditions and 34W under typical case conditions. Packaged in an 8-PQFN (3.3x3.3) format, it is suitable for surface mounting in applications such as power management, automotive systems, and industrial automation. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 34W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1667 pF @ 10 V |
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