IRFHM7194TRPBF
MOSFET N-CH 100V 9.3A/34A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FASTIRFET™, HEXFET® N-Channel MOSFET, part number IRFHM7194TRPBF, offers a 100V drain-source voltage and a continuous drain current of 9.3A at 25°C ambient and 34A at 25°C case temperature. With a maximum power dissipation of 2.8W (Ta) and 37W (Tc), this MOSFET features a low on-resistance of 16.4mOhm at 20A and 10V Vgs. The component utilizes advanced MOSFET technology and is housed in an 8-PQFN (3.3x3.3) Power33 package, suitable for surface mounting. Key parameters include a gate charge of 19 nC at 10V and an input capacitance of 733 pF at 50V. This device is engineered for demanding applications across various industries including automotive, industrial control, and power management systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: FASTIRFET™, HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta), 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 50µA |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 733 pF @ 50 V |
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