IRFHM4231TRPBF
MOSFET N-CH 25V 40A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFHM4231TRPBF, features a 25V drain-source voltage and a continuous drain current of 40A at 25°C (Tc). This device is optimized for high-efficiency switching applications, offering a low on-resistance of 3.4mOhm maximum at 30A and 10V Vgs. The 8-PQFN (3x3) package facilitates efficient thermal management, with a maximum power dissipation of 29W at 25°C (Tc). Key parameters include a gate charge of 20nC maximum at 10V Vgs and an input capacitance of 1270pF maximum at 13V Vds. Operating temperature ranges from -55°C to 150°C. This component is utilized in automotive and industrial power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 29W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
| Supplier Device Package | 8-PQFN (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 13 V |
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