IRFHM4226TRPBF
MOSFET N CH 25V 28A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFHM4226TRPBF. This 25V device features a low Rds(on) of 2.2mOhm at 30A and 10V Vgs, with a continuous drain current capability of 28A at 25°C ambient. The QFN package with exposed pad offers efficient thermal performance, with a maximum power dissipation of 2.7W (Ta) and 39W (Tc). Key parameters include a gate charge of 32 nC at 10V, input capacitance of 2000 pF at 13V, and a Vgs(th) of 2.1V at 50µA. Designed for high-efficiency switching applications, this MOSFET is suitable for use in automotive, industrial power, and consumer electronics sectors. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 39W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 50µA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 13 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
