IRFHM3911TRPBF
MOSFET N-CH 100V 3.2A/20A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 3.2A (Ta), 20A (Tc) 2.8W (Ta), 29W (Tc) Surface Mount 8-PQFN (3x3)
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 6.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 29W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 35µA |
| Supplier Device Package | 8-PQFN (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 50 V |
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