IRFH8337TRPBF
MOSFET N-CH 30V 12A/35A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, IRFH8337TRPBF, is a 30V device designed for high-efficiency power conversion applications. This PQFN (5x6) packaged MOSFET offers a continuous drain current of 12A at ambient temperature and 35A at case temperature. With a low on-resistance (Rds On) of 12.8mOhm at 16.2A and 10V Vgs, it minimizes conduction losses. The device features a gate charge of 10 nC at 10V and input capacitance of 790 pF at 10V. Maximum power dissipation is rated at 3.2W (Ta) and 27W (Tc). Suitable for industrial and automotive power management systems, it operates across a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.8mOhm @ 16.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 27W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 10 V |
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