IRFH8337TR2PBF
MOSFET N-CH 30V 9.7A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IRFH8337TR2PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and supports continuous drain currents of 12A at ambient temperature (Ta) and 35A at case temperature (Tc). The low on-resistance (Rds On) of 12.8mOhm is achieved at 16.2A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 10 nC (max) at 10V and input capacitance (Ciss) of 790 pF (max) at 10V Vds. The device utilizes Metal Oxide technology and is housed in an 8-PowerTDFN package with a 5x6 PQFN supplier device package, suitable for surface mounting. The threshold voltage (Vgs(th)) is a maximum of 2.35V at 25µA. This MOSFET is commonly utilized in automotive and industrial power management systems. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.8mOhm @ 16.2A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 10 V |
Request a Quote
Clients Also Buy
BSZ021N04LS6ATMA1
MOSFET N-CH 40V 25A/40A TSDSON
IPP082N10NF2SAKMA1
TRENCH >=100V
IPD65R1K4CFDBTMA1
MOSFET N-CH 650V 2.8A TO252-3
